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Issue DateTitleAuthor(s)TypeAccess Type
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
2006Luminescence and structural properties of defects in ion implanted ZnOMonteiro, T.; Soares, M.J.; Neves, A.J.; Carmo, M.C.; Peres, M.; Cruz, A.; Alves, E.; Wahl, U.; Rita, E.; Munoz-SanJose, V.; Zuniga-Perez, J.conferenceObjectrestrictedAccess
2006Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dotsCerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E.articleopenAccess
2001Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A. Sá; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.articlerestrictedAccess
2001Green and red emission in Ca implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Liu, C.articlerestrictedAccess
2001Photoluminescence studies in ZnO samplesBoemare, C.; Monteiro, T.; Soares, M.J.; Guilherme, J.G.; Alves, E.articlerestrictedAccess
Nov-2005Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ionsMonteiro, T.; Neves, A. J.; Soares, M. J.; Carmo, M. C.; Peres, M.; Alves, E.; Rita, E.articleopenAccess
2000Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L.articlerestrictedAccess
2000Steady-state and time-resolved luminescence in InGaN layersSeitz, R.; Gaspar, C.; Correia, M.; Monteiro, T.; Pereira, E.; Heuken, M.; Schoen, O.articlerestrictedAccess
Jul-2005Near-band-edge slow luminescence in nominally undoped bulk ZnOMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Wang, J.; Alves, E.; Rita, E.; Wahl, U.articleopenAccess
Results 11-20 of 21 (Search time: 0.004 seconds).