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http://hdl.handle.net/10773/6148| Title: | Near-band-edge slow luminescence in nominally undoped bulk ZnO |
| Author: | Monteiro, T. Neves, A.J. Carmo, M.C. Soares, M.J. Peres, M. Wang, J. Alves, E. Rita, E. Wahl, U. |
| Keywords: | Zinc compounds II-VI semiconductors Wide band gap semiconductors Photoluminescence Time resolved spectra Excitons Impurity states |
| Issue Date: | Jul-2005 |
| Publisher: | AIP |
| Abstract: | We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238 eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67 meV and deep acceptor levels at 250 and 232 meV. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/6148 |
| ISSN: | 0021-8979 |
| Publisher Version: | link.aip.org/link/doi/10.1063/1.1946200 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| JAPL.pdf | versão pdf do editor | 133.88 kB | Adobe PDF | View/Open |
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