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http://hdl.handle.net/10773/6198| Title: | Photoluminescence studies in ZnO samples |
| Author: | Boemare, C. Monteiro, T. Soares, M.J. Guilherme, J.G. Alves, E. |
| Keywords: | PL RBS TRPL ZnO Electric field effects Excitons Optoelectronic devices Photoluminescence Reflection Spectroscopic analysis Emission bands Zinc oxide |
| Issue Date: | 2001 |
| Publisher: | Elsevier |
| Abstract: | The similarities between ZnO and GaN samples reveal that the semiconductor oxide is a potential material as a promising material for optoelectronic devices. In this work, we study by spectroscopic and RBS techniques the characteristics of bulk ZnO. A comparison between the energy separation of the several groups of near band edge photoluminescence emission bands and the energy separation between the free exciton resonances observed in reflectivity is made. We report on the luminescence dependence from temperature and the variation of the relative intensities of the lines. From the data, an assignment of recombination centers is discussed. © 2001 Elsevier Science B.V. All rights reserved. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/6198 |
| DOI: | 10.1016/S0921-4526(01)00854-7 |
| ISSN: | 0921-4526 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2001_Physica-B-Condensed-Matter2.pdf | versão pdf do editor | 140.54 kB | Adobe PDF |  |
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