Photoluminescence and lattice location of Eu and Pr implanted GaN samples

Abstract

Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS techniques. Sharp emission lines due to intra-4fn shell transitions can be observed even at room temperature for the Eu3+ and Pr3+. The photoluminescence spectra recorded by the above band gap excitation reveal dominant transitions due to the 5D0→7F1,2,3 lines at 6004, 6211 and 6632Å for the Eu3+ and 3P0,1→3F2,3 at 6450 and 6518Å, respectively, for the Pr3+. We report on the temperature dependence of the intra-ionic emissions as well as on the lattice site location of the RE detailed angular scans through the 〈0001〉 and 〈101̄1〉 axial directions; which indicates that for Pr, complete substitutionality on the Ga sites was achieved while for Eu a Ga displaced site was found. © 2001 Elsevier Science B.V. All rights reserved.