Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/5630| Title: | Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions |
| Author: | Monteiro, T. Neves, A. J. Soares, M. J. Carmo, M. C. Peres, M. Alves, E. Rita, E. |
| Keywords: | Zinc compounds Thulium II-VI semiconductors iion implantation Optical frequency conversion Ultraviolet spectra Visible spectra Photoluminescence Energy gap |
| Issue Date: | Nov-2005 |
| Publisher: | American Institute of Physics |
| Abstract: | We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/5630 |
| ISSN: | 0003-6951 |
| Publisher Version: | http://link.aip.org/link/doi/10.1063/1.2128491 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| APL.pdf | versão pdf do editor | 60.07 kB | Adobe PDF | View/Open |
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