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Issue Date
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2004
Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
Niehus, M.
;
Sanguino, P.
;
Schwarz, R.
;
Fedorov, A.
;
Martinho, J.M.G.
;
Soares, Manuel
;
Monteiro, Teresa
;
Wünsch, F.
;
Kunst, M.
article
2003
Optical doping of ZnO with Tm by ion implantation
Rita, E.
;
Alves, E.
;
Wahl, U.
;
Correia, J.G.
;
Neves, A.J.
;
Soares, M.J.
;
Monteiro, T.
article
22-Mar-2008
Defect studies on fast and thermal neutron irradiated GaN
Lorenz, K.
;
Marques, J.G.
;
Franco, N.
;
Alves, E.
;
Peres, M.
;
Correia, M.R.
;
Monteiro, T.
article
2006
Luminescence and structural properties of defects in ion implanted ZnO
Monteiro, T.
;
Soares, M.J.
;
Neves, A.J.
;
Carmo, M.C.
;
Peres, M.
;
Cruz, A.
;
Alves, E.
;
Wahl, U.
;
Rita, E.
;
Munoz-SanJose, V.
;
Zuniga-Perez, J.
conferenceObject
2006
Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Cerqueira, M.F.
;
Stepikhova, M.
;
Losurdo, M.
;
Monteiro, T.
;
Soares, M.J.
;
Peres, M.
;
Neves, A.
;
Alves, E.
article
2003
Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN
Sanguino, P.
;
Niehus, M.
;
Melo, L.
;
Schwarz, R.
;
Fedorov, A.
;
Martinho, J.M.G.
;
Soares, Manuel
;
Monteiro, Teresa
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
2001
Green and red emission in Ca implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M.J.
;
Alves, E.
;
Liu, C.
article
2001
Photoluminescence studies in ZnO samples
Boemare, C.
;
Monteiro, T.
;
Soares, M.J.
;
Guilherme, J.G.
;
Alves, E.
article
Nov-2005
Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Monteiro, T.
;
Neves, A. J.
;
Soares, M. J.
;
Carmo, M. C.
;
Peres, M.
;
Alves, E.
;
Rita, E.
article
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Ion implantation
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Gallium nitride
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Excitons
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GaN
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Implantation
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PL
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Pulsed laser deposition
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II-VI semiconductors
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