Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/5511
Title: | Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN |
Author: | Sanguino, P. Niehus, M. Melo, L. Schwarz, R. Fedorov, A. Martinho, J.M.G. Soares, Manuel Monteiro, Teresa |
Keywords: | PLD of GaN ps-Fluorescence decay Transient photoconductivity Atomic force microscopy Dye lasers Fluorescence Grain boundaries Morphology Photoconductivity Photoluminescence Polycrystalline materials Pulsed laser deposition Sapphire Thermoanalysis Thin films X ray analysis X ray diffraction analysis Multiphonon emission Transient photoconductivity Gallium nitride |
Issue Date: | 2003 |
Publisher: | Elsevier |
Abstract: | In this work we focus on the study of the fast photoluminescence decay in the ps time regime in comparison with structural properties of GaN films deposited by a cyclic pulsed laser deposition technique. Structural film properties are obtained from X-ray analysis and atomic force microscopy. Steady-state photoluminescence performed at 13 K shows the typical donor-bound excitonic transition (D0X) at 3.47 eV and a line near 3.42 eV which can be related to structural defects. Fast fluorescence decays were obtained after excitation at 287 nm (4.32 eV) with 5ps pulses from a frequency-doubled cavity-dumped dye laser. At room temperature the decay of the blue fluorescence at 367 nm showed decay times between 4 and 40 ps, whereas the yellow contribution at 530 nm could best be described by a multi-exponential fit with decay times of several ns. The results are compatible with published exciton decay times in epitaxial MOCVD-grown GaN films. © 2003 Elsevier B.V. All rights reserved. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/5511 |
ISSN: | 0921-4526 |
Appears in Collections: | DFis - Artigos |
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File | Description | Size | Format | |
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2003_Physica-B-Condensed-Matter1.pdf | versão pdf do editor | 306.36 kB | Adobe PDF |
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