TY: JOUR T1 - Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN A1 - Sanguino, P. A1 - Niehus, M. A1 - Melo, L. A1 - Schwarz, R. A1 - Fedorov, A. A1 - Martinho, J.M.G. A1 - Soares, Manuel A1 - Monteiro, Teresa N2 - In this work we focus on the study of the fast photoluminescence decay in the ps time regime in comparison with structural properties of GaN films deposited by a cyclic pulsed laser deposition technique. Structural film properties are obtained from X-ray analysis and atomic force microscopy. Steady-state photoluminescence performed at 13 K shows the typical donor-bound excitonic transition (D0X) at 3.47 eV and a line near 3.42 eV which can be related to structural defects. Fast fluorescence decays were obtained after excitation at 287 nm (4.32 eV) with 5ps pulses from a frequency-doubled cavity-dumped dye laser. At room temperature the decay of the blue fluorescence at 367 nm showed decay times between 4 and 40 ps, whereas the yellow contribution at 530 nm could best be described by a multi-exponential fit with decay times of several ns. The results are compatible with published exciton decay times in epitaxial MOCVD-grown GaN films. © 2003 Elsevier B.V. All rights reserved. UR - https://ria.ua.pt/handle/10773/5511 Y1 - 2003 PB - Elsevier