Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/5511
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sanguino, P. | pt |
dc.contributor.author | Niehus, M. | pt |
dc.contributor.author | Melo, L. | pt |
dc.contributor.author | Schwarz, R. | pt |
dc.contributor.author | Fedorov, A. | pt |
dc.contributor.author | Martinho, J.M.G. | pt |
dc.contributor.author | Soares, Manuel | pt |
dc.contributor.author | Monteiro, Teresa | pt |
dc.date.accessioned | 2012-01-27T09:55:52Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 0921-4526 | pt |
dc.identifier.uri | http://hdl.handle.net/10773/5511 | - |
dc.description.abstract | In this work we focus on the study of the fast photoluminescence decay in the ps time regime in comparison with structural properties of GaN films deposited by a cyclic pulsed laser deposition technique. Structural film properties are obtained from X-ray analysis and atomic force microscopy. Steady-state photoluminescence performed at 13 K shows the typical donor-bound excitonic transition (D0X) at 3.47 eV and a line near 3.42 eV which can be related to structural defects. Fast fluorescence decays were obtained after excitation at 287 nm (4.32 eV) with 5ps pulses from a frequency-doubled cavity-dumped dye laser. At room temperature the decay of the blue fluorescence at 367 nm showed decay times between 4 and 40 ps, whereas the yellow contribution at 530 nm could best be described by a multi-exponential fit with decay times of several ns. The results are compatible with published exciton decay times in epitaxial MOCVD-grown GaN films. © 2003 Elsevier B.V. All rights reserved. | pt |
dc.description.sponsorship | PRAXIS/P/FIS/10178/1998 | pt |
dc.description.sponsorship | POCTI/FAT/42185/2001 | pt |
dc.language.iso | eng | pt |
dc.publisher | Elsevier | pt |
dc.relation | dx.doi.org/10.1016/j.physb.2003.09.035 | pt |
dc.relation.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0346686017&partnerID=40&md5=7a6f02d31f39ee78861cabb292d7d1a6 | |
dc.rights | restrictedAccess | por |
dc.subject | PLD of GaN | pt |
dc.subject | ps-Fluorescence decay | pt |
dc.subject | Transient photoconductivity | pt |
dc.subject | Atomic force microscopy | pt |
dc.subject | Dye lasers | pt |
dc.subject | Fluorescence | pt |
dc.subject | Grain boundaries | pt |
dc.subject | Morphology | pt |
dc.subject | Photoconductivity | pt |
dc.subject | Photoluminescence | pt |
dc.subject | Polycrystalline materials | pt |
dc.subject | Pulsed laser deposition | pt |
dc.subject | Sapphire | pt |
dc.subject | Thermoanalysis | pt |
dc.subject | Thin films | pt |
dc.subject | X ray analysis | pt |
dc.subject | X ray diffraction analysis | pt |
dc.subject | Multiphonon emission | pt |
dc.subject | Transient photoconductivity | pt |
dc.subject | Gallium nitride | pt |
dc.title | Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.firstPage | 457 | pt |
degois.publication.lastPage | 461 | pt |
degois.publication.title | Physica B: Condensed Matter | pt |
degois.publication.volume | 340-342 | pt |
dc.date.embargo | 10000-01-01 | - |
Appears in Collections: | DFis - Artigos |
Files in This Item:
File | Description | Size | Format | |
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2003_Physica-B-Condensed-Matter1.pdf | versão pdf do editor | 306.36 kB | Adobe PDF |
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