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http://hdl.handle.net/10773/5512| Title: | Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses |
| Author: | Niehus, M. Sanguino, P. Schwarz, R. Fedorov, A. Martinho, J.M.G. Soares, Manuel Monteiro, Teresa Wünsch, F. Kunst, M. |
| Keywords: | Atomic force microscopy Carrier concentration Electron traps Epitaxial growth Laser pulses Light emitting diodes Photoluminescence Photomultipliers Polycrystalline materials Probability Pulsed laser deposition Sapphire Scanning electron microscopy Thin films Transport properties X ray photoelectron spectroscopy Stready-state photoluminescence Thermal mismatch Time-resolved photoluminescence (TRPL) Transient photocurrents Gallium nitride |
| Issue Date: | 2004 |
| Publisher: | Elsevier |
| Abstract: | We have applied short laser pulses with a minimal pulse width of 5 ps to study the non-radiative and radiative carrier density decay in polycrystalline GaN. The GaN films are deposited by a cyclic pulsed laser deposition (PLD) technique at a relatively low substrate temperature of 600 °C on sapphire substrates. Results from photoluminescence decay and transient photocurrents are compared with respect to trapping, recombination, and transport of photogenerated carriers in polycrystalline GaN thin films. © 2004 Elsevier B.V. All rights reserved. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/5512 |
| ISSN: | 0022-3093 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2004_Journal-of-Non-Crystalline-Solids.pdf | versão pdf do editor | 898.64 kB | Adobe PDF |  |
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