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Issue DateTitleAuthor(s)TypeAccess Type
2001Green and red emission in Ca implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Liu, C.articlerestrictedAccess
1998Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P.articlerestrictedAccess
2001Photoluminescence studies in ZnO samplesBoemare, C.; Monteiro, T.; Soares, M.J.; Guilherme, J.G.; Alves, E.articlerestrictedAccess
23-Mar-2012Rare earth co-doping nitride layers for visible lightRodrigues, J.; Miranda, S. M. C.; Santos, N. F.; Neves, A. J.; Alves, E.; Lorenz, K.; Monteiro, T.articlerestrictedAccess
2001Indium content determination related with structural and optical properties of InGaN layersPereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Soares, M.R.; Alves, E.articlerestrictedAccess
Apr-2001High temperature annealing of Er implanted GaNAlves, E.; Monteiro, T.; Soares, J.; Santos, L.; Silva, M.F.Da.; Soares, J.C.; Lojkowski, W.; Kolesnikov, D.; Vianden, R.; Correia, J.G.articlerestrictedAccess
Nov-2005Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ionsMonteiro, T.; Neves, A. J.; Soares, M. J.; Carmo, M. C.; Peres, M.; Alves, E.; Rita, E.articleopenAccess
2000Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L.articlerestrictedAccess
2000Steady-state and time-resolved luminescence in InGaN layersSeitz, R.; Gaspar, C.; Correia, M.; Monteiro, T.; Pereira, E.; Heuken, M.; Schoen, O.articlerestrictedAccess
Mar-2001Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samplesMonteiro, T.; Soares, J.; Correia, M.R.; Alves, E.articleopenAccess
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