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http://hdl.handle.net/10773/6632| Title: | Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN |
| Author: | Seitz, R. Gaspar, C. Monteiro, T. Pereira, E. Leroux, M. Beaumont, B. Gibart, P. |
| Keywords: | GaN Mid-band-gap emissions Si-doping Time resolved luminescence Electron emission Electron spectroscopy Electron transitions Energy gap Luminescence of solids Semiconductor doping Silicon Time resolved spectroscopy Semiconducting gallium compounds |
| Issue Date: | 1998 |
| Publisher: | Elsevier |
| Abstract: | Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. While the near-band-gap emission is due to fast transitions (with decays shorter than 10 μs) the lower energy emissions have longer components whose behaviour is discussed. © 1998 Elsevier Science B.V. All rights reserved. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/6632 |
| DOI: | 10.1016/S0022-0248(98)00190-0 |
| ISSN: | 0022-0248 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1998_Journal-of-Crystal-Growth.pdf | versão pdf do editor | 159.64 kB | Adobe PDF |  |
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