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Title: Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
Author: Monteiro, T.
Soares, J.
Correia, M.R.
Alves, E.
Keywords: oxygen
gallium compounds
III-V semiconductors
Rutherford backscattering
ion implantation
impurity states
Issue Date: Mar-2001
Publisher: AIP
Abstract: Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.
Peer review: yes
ISSN: 0021-8979
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Appears in Collections:DFis - Artigos

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