Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/6195
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Monteiro, T. | pt |
dc.contributor.author | Soares, J. | pt |
dc.contributor.author | Correia, M.R. | pt |
dc.contributor.author | Alves, E. | pt |
dc.date.accessioned | 2012-02-10T13:54:03Z | - |
dc.date.available | 2012-02-10T13:54:03Z | - |
dc.date.issued | 2001-03 | - |
dc.identifier.issn | 0021-8979 | pt |
dc.identifier.uri | http://hdl.handle.net/10773/6195 | - |
dc.description.abstract | Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified. | pt |
dc.language.iso | eng | pt |
dc.publisher | AIP | pt |
dc.relation.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0035356782&partnerID=40&md5=0db5f5a6038ff14098c1a632a74f67cf | |
dc.rights | openAccess | por |
dc.subject | oxygen | pt |
dc.subject | erbium | pt |
dc.subject | gallium compounds | pt |
dc.subject | III-V semiconductors | pt |
dc.subject | annealing | pt |
dc.subject | photoluminescence | pt |
dc.subject | Rutherford backscattering | pt |
dc.subject | ion implantation | pt |
dc.subject | impurity states | pt |
dc.title | Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.firstPage | 6183 | pt |
degois.publication.issue | 11 | pt |
degois.publication.issue | 11 I | |
degois.publication.lastPage | 6188 | pt |
degois.publication.title | Journal of Applied Physics | pt |
degois.publication.volume | 89 | pt |
dc.relation.publisherversion | link.aip.org/link/doi/10.1063/1.1369404 | * |
Appears in Collections: | DFis - Artigos |
Files in This Item:
File | Description | Size | Format | |
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JAPL.pdf | versão pdf do editor | 114.26 kB | Adobe PDF | View/Open |
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