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Issue Date
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2006
Luminescence and structural properties of defects in ion implanted ZnO
Monteiro, T.
;
Soares, M.J.
;
Neves, A.J.
;
Carmo, M.C.
;
Peres, M.
;
Cruz, A.
;
Alves, E.
;
Wahl, U.
;
Rita, E.
;
Munoz-SanJose, V.
;
Zuniga-Perez, J.
conferenceObject
2006
Layer-by-layer deposition of organically capped quantum dots
Neves, M.C.
;
Pereira, A.S.
;
Peres, M.
;
Kholkin, A.
;
Monteiro, T.
;
Trindade, T.
article
2004
Optical and RBS studies in Tm implanted ZnO samples
Monteiro, T.
;
Soares, M.J.
;
Neves, A.
;
Oliveira, M.
;
Rita, E.
;
Wahl, U.
;
Alves, E.
conferenceObject
2006
Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Cerqueira, M.F.
;
Stepikhova, M.
;
Losurdo, M.
;
Monteiro, T.
;
Soares, M.J.
;
Peres, M.
;
Neves, A.
;
Alves, E.
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
2001
Green and red emission in Ca implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M.J.
;
Alves, E.
;
Liu, C.
article
2001
Photoluminescence studies in ZnO samples
Boemare, C.
;
Monteiro, T.
;
Soares, M.J.
;
Guilherme, J.G.
;
Alves, E.
article
2001
Indium content determination related with structural and optical properties of InGaN layers
Pereira, S.
;
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Soares, M.R.
;
Alves, E.
article
Apr-2001
High temperature annealing of Er implanted GaN
Alves, E.
;
Monteiro, T.
;
Soares, J.
;
Santos, L.
;
Silva, M.F.Da.
;
Soares, J.C.
;
Lojkowski, W.
;
Kolesnikov, D.
;
Vianden, R.
;
Correia, J.G.
article
Nov-2005
Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Monteiro, T.
;
Neves, A. J.
;
Soares, M. J.
;
Carmo, M. C.
;
Peres, M.
;
Alves, E.
;
Rita, E.
article
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Photoluminescence
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Optical properties
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Ion implantation
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GaN
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II-VI semiconductors
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PL
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