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Issue DateTitleAuthor(s)TypeAccess Type
2004Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulsesNiehus, M.; Sanguino, P.; Schwarz, R.; Fedorov, A.; Martinho, J.M.G.; Soares, Manuel; Monteiro, Teresa; Wünsch, F.; Kunst, M.articlerestrictedAccess
2003Optical doping of ZnO with Tm by ion implantationRita, E.; Alves, E.; Wahl, U.; Correia, J.G.; Neves, A.J.; Soares, M.J.; Monteiro, T.articlerestrictedAccess
2010High temperature annealing of Europium implanted AlNLorenz, K.; Magalhães, Sérgio; Alves, E.; Peres, Marco; Monteiro, Teresa; Neves, Armando; Boćkowski, M.articlerestrictedAccess
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
2006Luminescence and structural properties of defects in ion implanted ZnOMonteiro, T.; Soares, M.J.; Neves, A.J.; Carmo, M.C.; Peres, M.; Cruz, A.; Alves, E.; Wahl, U.; Rita, E.; Munoz-SanJose, V.; Zuniga-Perez, J.conferenceObjectrestrictedAccess
2006Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dotsCerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E.articleopenAccess
1990Non-radiative processes in deep centres of diamondPereira, E.; Monteiro, T.articlerestrictedAccess
2003Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaNSanguino, P.; Niehus, M.; Melo, L.; Schwarz, R.; Fedorov, A.; Martinho, J.M.G.; Soares, Manuel; Monteiro, TeresaarticlerestrictedAccess
2001Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A. Sá; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.articlerestrictedAccess
2001Green and red emission in Ca implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Liu, C.articlerestrictedAccess
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