1. Home

Search


Current filters:

Start a new search
Add filters:

Use filters to refine the search results.

 | 
Item hits:
Issue DateTitleAuthor(s)TypeAccess Type
2000Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L.articlerestrictedAccess
Mar-2001Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samplesMonteiro, T.; Soares, J.; Correia, M.R.; Alves, E.articleopenAccess
Jun-2006Optical active centres in ZnO samplesMonteiro, T.; Soares, M.J.; Neves, A.; Pereira, S.; Correia, M.R.; Peres, M.; Alves, E.; Rogers, D.; Teherani, F.; Munoz-SanJose, V.; Trindade, T.; Pereira, A.articlerestrictedAccess
Sep-2005A green-emitting CdSe/poly(butyl acrylate) nanocompositePeres, M.; Costa, L. C.; Neves, A.; Soares, M. J.; Monteiro, T.; Esteves, A. C.; Barros-Timmons, A.; Trindade, T.; Kholkin, A.; Alves, E.articlerestrictedAccess
Jul-2005Near-band-edge slow luminescence in nominally undoped bulk ZnOMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Wang, J.; Alves, E.; Rita, E.; Wahl, U.articleopenAccess
Jan-2006Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantationMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Alves, E.; Rita, E.; Wahl, U.articlerestrictedAccess
Sep-2006Optical behaviour of Er doped rutile by ion implantationAlves, E.; Pinto, J.V.; da Silva, R.C.; Peres, M.; Soares, M.J.; Monteiro, T.articlerestrictedAccess
15-Dec-2018Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperaturesFialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.articleopenAccess
2012Optical doping of AlxGa1-xN compounds by ion implantation of Tm ionsFialho, M.; Lorenz, K.; Magalhães, S; Redondo-Cubero, A.; Rodrigues, J.; Santos, N.F; Monteiro, T.; Alves, E.articleopenAccess
Jun-2019Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with TbRodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.articleopenAccess
Results 61-70 of 70 (Search time: 0.003 seconds).

Discover