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1996
2.2 eV luminescence in GaN
Hofmann, D. M.
;
Kovalev, D.
;
Steude, G.
;
Volm, D.
;
Meyer, B. K.
;
Xavier, C.
;
Monteiro, T.
;
Pereira, E.
;
Mokov, E. N.
;
Amano, H.
;
Akasaki, I.
conferenceObject
1999
Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Schoettker, B.
;
Frey, T.
;
As, D.J.
;
Schikora, D.
;
Lischka, K.
conferenceObject
1999
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Poisson, M.A.
;
Beaumont, B.
conferenceObject
1999
Electrical and photoelectronic properties of hexagonal GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, L.
;
Pereira, E.
;
Schön, Q.
;
Heuken, M.
article
1998
Distribution of 1.68 eV emission from diamond films
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Costa, L.C.
article
1991
Complex formation in Mn-doped GaP samples
Monteiro, T.
;
Pereira, E.
article
1992
Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
Monteiro, T.
;
Pereira, E.
article
1996
Cathodoluminescence study of GaN epitaxial layers
Cremades, A.
;
Piqueras, J.
;
Xavier, C.
;
Monteiro, T.
;
Pereira, E.
;
Meyer, B. K.
;
Hofmann, D. M.
;
Fischer, S.
article
1991
Delayed luminescence of the H3 centre in diamond
Pereira, E.
;
Monteiro, T.
article
1990
Non-radiative processes in deep centres of diamond
Pereira, E.
;
Monteiro, T.
article
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1
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1
Fischer, S.
1
Frey, T.
1
Heuken, M.
1
Kovalev, D.
1
Lischka, K.
.
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3
Diamond
2
Electron emission
2
Electron energy levels
2
Energy gap
2
GaP
2
Metallorganic chemical vapor depo...
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Sapphire
2
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