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|Title:||Complex formation in Mn-doped GaP samples|
|Abstract:||It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor|
|Appears in Collections:||DFis - Artigos|
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