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Title: Complex formation in Mn-doped GaP samples
Author: Monteiro, T.
Pereira, E.
Keywords: GaP
Issue Date: 1991
Publisher: Elsevier
Abstract: It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor
Peer review: yes
DOI: 10.1016/0169-4332(91)90175-J
ISSN: 0169-4332
Appears in Collections:DFis - Artigos

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