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http://hdl.handle.net/10773/6495
Title: | Complex formation in Mn-doped GaP samples |
Author: | Monteiro, T. Pereira, E. |
Keywords: | GaP Photoluminescence |
Issue Date: | 1991 |
Publisher: | Elsevier |
Abstract: | It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6495 |
DOI: | 10.1016/0169-4332(91)90175-J |
ISSN: | 0169-4332 |
Appears in Collections: | DFis - Artigos |
Files in This Item:
File | Description | Size | Format | |
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ASS.pdf | versão pdf do editor | 2.57 MB | Adobe PDF |
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