Please use this identifier to cite or link to this item:
|Title:||2.2 eV luminescence in GaN|
|Author:||Hofmann, D. M.|
Meyer, B. K.
Mokov, E. N.
Metallorganic vapor phase epitaxy
|Publisher:||Materials Research Society|
|Abstract:||The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.|
|Appears in Collections:||FIS - Comunicações|
Files in This Item:
|2.2 eV Luminescence in GaN.pdf||605.44 kB||Adobe PDF||View/Open Request a copy|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.