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|Title:||2.2 eV luminescence in GaN|
|Author:||Hofmann, D. M.|
Meyer, B. K.
Mokov, E. N.
Metallorganic vapor phase epitaxy
|Publisher:||Materials Research Society|
|Abstract:||The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.|
|Appears in Collections:||DFis - Comunicações|
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