Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6091
Title: Electrical and photoelectronic properties of hexagonal GaN
Author: Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, L.
Pereira, E.
Schön, Q.
Heuken, M.
Keywords: Activation energy
Energy gap
Optoelectronic devices
Photoconductivity
Photoluminescence
Semiconducting films
Issue Date: 1999
Publisher: Wiley-VCH Verlag Berlin GmbH
Abstract: Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and ≈2eV. The dark current and the yellow photoluminescence band show the same activation energy (42 meV) supporting therefore the model that relates the yellow band to a shallow donor to a deep acceptor transition. The photocurrent is thermally quenched with an activation energy of 77 meV.
Peer review: yes
URI: http://hdl.handle.net/10773/6091
ISSN: 0031-8965
Publisher Version: link.aps.org/doi/10.1103/PhysRevB.77.075103
Appears in Collections:FIS - Artigos

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