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|Title:||Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV|
|Abstract:||Broad-band emission observed in n-type Mn-doped GaP samples before and after annealing at 1000°C are studied by time resolved spectroscopy and interpreted as due to excitons bound to complexes. These complexes are rearranged by the heat treatment.|
|Appears in Collections:||DFis - Artigos|
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