Browsing by Author Monteiro, T.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 150  next >
Issue DateTitleAuthor(s)TypeAccess Type
19962.2 eV luminescence in GaNHofmann, D. M.; Kovalev, D.; Steude, G.; Volm, D.; Meyer, B. K.; Xavier, C.; Monteiro, T.; Pereira, E.; Mokov, E. N.; Amano, H.; Akasaki, I.conferenceObjectrestrictedAccess
2005Annealing properties of ZnO films grown using diethyl zinc and tertiary butanolWang, J.Z.; Peres, M.; Scares, J.; Gorochov, O.; Barradas, N.P.; Alves, E.; Lewis, J.E.; Fortunato, E.; Neves, A.; Monteiro, T.articlerestrictedAccess
23-Nov-2022Boosting the optical properties of polylactic acid/ lanthanide-based metal-organic framework compositesSimões, R.; Rodrigues, J.; Granadeiro, C.M.; Rino, L.; Neto, V.; Monteiro, T.; Gonçalves, G.articleembargoedAccess
2011Bright room-temperature green luminescence from YSZ:Tb3+Soares, M.R.N.; Nico, C.; Rodrigues, J.; Peres, M.; Soares, M.J.; Fernandes, A.J.S.; Costa, F.M.; Monteiro, T.articlerestrictedAccess
1997Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphireMonteiro, T.; Pereira, E.; Correia, M. R.; Xavier, C.; Hofmann, D. M.; Meyer, B. K.; Fischer, S.; Cremades, A.; Piqueras, J.articlerestrictedAccess
1996Cathodoluminescence study of GaN epitaxial layersCremades, A.; Piqueras, J.; Xavier, C.; Monteiro, T.; Pereira, E.; Meyer, B. K.; Hofmann, D. M.; Fischer, S.articlerestrictedAccess
2003Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasmaSanguino, P.; Niehus, M.; Melo, L.V.; Schwarz, R.; Koynov, S.; Monteiro, T.; Soares, J.; Alves, H.; Meyer, B.K.articlerestrictedAccess
2000Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodesVacas, J.; Lahrèche, H.; Monteiro, T.; Caspar, C.; Pereira, E.; Brylinski, C.; Di Forte-Poisson, M.A.articleopenAccess
1991Complex formation in Mn-doped GaP samplesMonteiro, T.; Pereira, E.articlerestrictedAccess
2015Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contentsMagalhaes, S.; Watson, I. M.; Pereira, S.; Franco, N.; Tan, L. T.; Martin, R. W.; O'Donnell, K. P.; Alves, E.; Araujo, J. P.; Monteiro, T.; Lorenz, K.articlerestrictedAccess
Jan-2001Compositional dependence of the strain-free optical band gap in InxGa1 - xN layersPereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Alves, E.; Sequeira, A.D.; Franco, N.articleopenAccess
2010Damage recovery and optical activity in europium implanted wide gap oxidesAlves, E.; Marques, C.; Franco, N.; Alves, L.C.; Peres, M.; Soares, M.J.; Monteiro, T.articlerestrictedAccess
15-Dec-2018Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperaturesFialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.articleopenAccess
2010Defect studies and optical activation of Yb doped GaNLorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G.articlerestrictedAccess
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
1991Delayed luminescence of the H3 centre in diamondPereira, E.; Monteiro, T.articlerestrictedAccess
2008Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displaysSantos, G.; Fonseca, F.; Andrade, A.M.; Patrocínio, A.O.T.; Mizoguchi, S.K.; Iha, N.Y.M.; Peres, M.; Monteiro, T.; Pereira, L.articlerestrictedAccess
2013Disorder induced violet/blue luminescence in rf-deposited ZnO filmsPeres, M.; Magalhaes, S.; Soares, M. R.; Soares, M. J.; Rino, L.; Alves, E.; Lorenz, K.; Correia, M. R.; Lourenco, A. C.; Monteiro, T.articlerestrictedAccess
1998Distribution of 1.68 eV emission from diamond filmsCorreia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C.articleopenAccess
2014Doping of Ga2O3 bulk crystals and NWs by ion implantationLorenz, K.; Peres, M.; Felizardo, M.; Correia, J. G.; Alves, L. C.; Alves, E.; Lopez, I.; Nogales, E.; Mendez, B.; Piqueras, J.; Barbosa, M. B.; Araujo, J. P.; Goncalves, J. N.; Rodrigues, J.; Rino, L.; Monteiro, T.; Villora, E. G.; Shimamura, K.articleopenAccess