Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6087
Title: Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Author: Vacas, J.
Lahrèche, H.
Monteiro, T.
Caspar, C.
Pereira, E.
Brylinski, C.
Di Forte-Poisson, M.A.
Keywords: Homojunction and heterojunction diodes
electroluminescence
deep level
Issue Date: 2000
Publisher: Trans Tech Publ Ltd
Abstract: A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.
Peer review: yes
URI: http://hdl.handle.net/10773/6087
DOI: 10.4028/www.scientific.net/MSF.338-342.1651
ISSN: 0255-5476
Appears in Collections:FIS - Artigos

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