Please use this identifier to cite or link to this item:
|Title:||Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes|
Di Forte-Poisson, M.A.
|Keywords:||Homojunction and heterojunction diodes|
|Publisher:||Trans Tech Publ Ltd|
|Abstract:||A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.|
|Appears in Collections:||FIS - Artigos|
Files in This Item:
|MSF.pdf||versão pdf do editor||2.86 MB||Adobe PDF||View/Open|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.