Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/6087
Title: | Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
Author: | Vacas, J. Lahrèche, H. Monteiro, T. Caspar, C. Pereira, E. Brylinski, C. Di Forte-Poisson, M.A. |
Keywords: | Homojunction and heterojunction diodes electroluminescence deep level |
Issue Date: | 2000 |
Publisher: | Trans Tech Publ Ltd |
Abstract: | A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6087 |
DOI: | 10.4028/www.scientific.net/MSF.338-342.1651 |
ISSN: | 0255-5476 |
Appears in Collections: | DFis - Artigos |
Files in This Item:
File | Description | Size | Format | |
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MSF.pdf | versão pdf do editor | 2.86 MB | Adobe PDF | View/Open |
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