Please use this identifier to cite or link to this item:
Title: Annealing properties of ZnO films grown using diethyl zinc and tertiary butanol
Author: Wang, J.Z.
Peres, M.
Scares, J.
Gorochov, O.
Barradas, N.P.
Alves, E.
Lewis, J.E.
Fortunato, E.
Neves, A.
Monteiro, T.
Keywords: II-VI semiconductors
Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
structural and optical properties
Issue Date: 2005
Publisher: IOP
Abstract: ZnO films were grown by atmospheric metal–organic chemical vapour deposition and annealed at 900 °C in an oxygen environment. The annealing properties of the films have been characterized by means of x-ray diffraction, Raman scattering, Rutherford backscattering (RBS), elastic recoil detection analysis (ERDA) and photoluminescence spectra. The results indicate that high crystal quality ZnO film has been obtained after annealing. The full width at half-maximum of ω rocking curves is only 369 arcsec. The Raman spectra show a strong high frequency E2 mode peak comparable to that for bulk ZnO. The intensity ratio of the E1(LO) peak to E2high peak before annealing is 0.81 and after annealing 0.75. RBS and ERDA spectra indicate that a stoichiometric ZnO film is formed and the annealing only changes the H content in the ZnO film. After annealing all emission lines become sharper, as expected, which means a higher quality film has been obtained.
Peer review: yes
DOI: 10.1088/0953-8984/17/10/026
ISSN: 0953-8984
Appears in Collections:DFis - Artigos

Files in This Item:
File Description SizeFormat 
JPC.pdfversão pdf do editor357.64 kBAdobe PDFrestrictedAccess

Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.