Utilize este identificador para referenciar este registo: http://hdl.handle.net/10773/21052
Título: Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping
Autor: Kachkanov, Vyacheslav
Dolbnya, Igor
O'Donnell, Kevin
Lorenz, Katharina
Pereira, Sergio
Watson, Ian
Sadler, Thomas
Li, Haoning
Zubialevich, Vitaly
Parbrook, Peter
Palavras-chave: ALUMINUM NITRIDE
DIFFRACTION
GAN
Data: 2013
Editora: WILEY-V C H VERLAG GMBH
Resumo: X-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction-space while probing III-nitride materials on the microscale. (C) 2012 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim
Peer review: yes
URI: http://hdl.handle.net/10773/21052
DOI: 10.1002/pssc.201200596
ISSN: 1862-6351
Versão do Editor: 10.1002/pssc.201200596
Aparece nas coleções: CICECO - Artigos



FacebookTwitterLinkedIn
Formato BibTex MendeleyEndnote Degois 

Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.