Composition measurement of epitaxial ScxGa1-xN films

Utilize este identificador para referenciar este registo: http://hdl.handle.net/10773/20495

Título:	Composition measurement of epitaxial ScxGa1-xN films
Autor:	Tsui, H. C. L. Goff, L. E. Barradas, N. P. Alves, E. Pereira, S. Palgrave, R. G. Davies, R. J. Beere, H. E. Farrer, I. Ritchie, D. A. Moram, M. A.
Palavras-chave:	SCANDIUM NITRIDE FILMS THIN-FILMS BAND-GAP INGAN EPILAYERS GROWTH SCGAN MICROSTRUCTURE SURFACE PLASMA LAYERS
Data:	2016
Editora:	IOP PUBLISHING LTD
Resumo:	Four different methods for measuring the compositions of epitaxial ScxGa1-xN films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial ScxGa1-xN films with 0 <= x <= 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.
Peer review:	yes
URI:	http://hdl.handle.net/10773/20495
DOI:	10.1088/0268-1242/31/6/064002
ISSN:	0268-1242
Versão do Editor:	10.1088/0268-1242/31/6/064002
Aparece nas coleções:	CICECO - Artigos

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