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Issue Date
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1999
Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Schoettker, B.
;
Frey, T.
;
As, D.J.
;
Schikora, D.
;
Lischka, K.
conferenceObject
1999
Electrical and photoelectronic properties of hexagonal GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, L.
;
Pereira, E.
;
Schön, Q.
;
Heuken, M.
article
Jan-2001
Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Pereira, S.
;
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Alves, E.
;
Sequeira, A.D.
;
Franco, N.
article
2003
Optical properties and transport in PLD-GaN
Niehus, M.
;
Sanguino, P.
;
Monteiro, T.
;
Soares, M.J.
;
Pereira, E.
;
Vieira, M.
;
Koynov, S.
;
Schwarz, R.
article
1998
Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Leroux, M.
;
Beaumont, B.
;
Gibart, P.
article
Nov-2005
Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Monteiro, T.
;
Neves, A. J.
;
Soares, M. J.
;
Carmo, M. C.
;
Peres, M.
;
Alves, E.
;
Rita, E.
article
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1
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1
Electron transitions
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Emission Bands
1
Excitons
1
Gallium compounds
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Gallium nitride
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GaN
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II-VI semiconductors
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III-V semiconductors
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