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Issue DateTitleAuthor(s)TypeAccess Type
1999Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layersSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.conferenceObjectopenAccess
Apr-2004The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputteringCerqueira, M.F.; Monteiro, T.; Stepikhova, M.V.; Losurdo, M.; Soares, M.J.; Gomes, I.articlerestrictedAccess
2012ZnO nanostructures grown on vertically aligned carbon nanotubes by laser-assisted flow depositionRodrigues, J.; Mata, D.; Fernandes, A. J. S.; Neto, M. A.; Silva, R. F.; Monteiro, T.; Costa, F. M.articlerestrictedAccess
2011Optical properties of LFZ grown β-Ga2O3:Eu3+ fibresSantos, N. F.; Rodrigues, J.; Fernandes, A. J. S.; Alves, L. C.; Alves, E.; Costa, F. M.; Monteiro, T.articleopenAccess
10-Jan-2011Structural and optical properties of europium doped zirconia single crystals fibers grown by laser floating zoneSoares, M.R.N.; Nico, C.; Peres, M.; Ferreira, N.; Fernandes, A.J.S.; Monteiro, T.; Costa, F.M.articleopenAccess
1999Electrical and photoelectronic properties of hexagonal GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, L.; Pereira, E.; Schön, Q.; Heuken, M.articlerestrictedAccess
1998Distribution of 1.68 eV emission from diamond filmsCorreia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C.articleopenAccess
1997Temperature behaviour of the yellow emission in GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P.articleopenAccess
1993Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescencePiqueras, J.; Domínguez-Adame, F.; Monteiro, T.; Pereira, E.articlerestrictedAccess
1991Complex formation in Mn-doped GaP samplesMonteiro, T.; Pereira, E.articlerestrictedAccess
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