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Issue DateTitleAuthor(s)TypeAccess Type
2011Rapid thermal annealing of rare earth implanted ZnO epitaxial layersMiranda, S.M.C.; Peres, M.; Monteiro, T.; Alves, E.; Sun, H.D.; Geruschke, T.; Vianden, R.; Lorenz, K.articlerestrictedAccess
2012AIN content influence on the properties of Al x Ga1- x N doped with Pr ionsFialho, M.; Magalhães, Sérgio; Alves, L.C.; Marques, C.; Maalej, R.; Monteiro, Teresa; Lorenz, K.; Alves, E.articlerestrictedAccess
7-May-2010Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dotsPeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B.articlerestrictedAccess
23-Mar-2012Rare earth co-doping nitride layers for visible lightRodrigues, J.; Miranda, S. M. C.; Santos, N. F.; Neves, A. J.; Alves, E.; Lorenz, K.; Monteiro, T.articlerestrictedAccess
15-Feb-2012Influence of neutron irradiation and annealing on the optical properties of GaNRodrigues, J.; Peres, M.; Soares, M. J.; Lorenz, K.; Marques, J. G.; Neves, A. J.; Monteiro, T.articlerestrictedAccess
15-Dec-2018Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperaturesFialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.articleopenAccess
2012Optical doping of AlxGa1-xN compounds by ion implantation of Tm ionsFialho, M.; Lorenz, K.; Magalhães, S; Redondo-Cubero, A.; Rodrigues, J.; Santos, N.F; Monteiro, T.; Alves, E.articleopenAccess
Jun-2019Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with TbRodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.articleopenAccess
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