Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/5520
Title: | AIN content influence on the properties of Al x Ga1- x N doped with Pr ions |
Author: | Fialho, M. Magalhães, Sérgio Alves, L.C. Marques, C. Maalej, R. Monteiro, Teresa Lorenz, K. Alves, E. |
Keywords: | AlGaN Ionoluminescence Rare earth implantation Rutherford backscattering/channeling X-ray diffraction |
Issue Date: | 2012 |
Publisher: | Elsevier |
Abstract: | The purpose of this work is the study of the structural and optical properties of Alx Ga1- x N films grown on (0 0 0 1) sapphire substrates with different AlN molar fraction implanted with 150 keV of praseodymium ions with a fluence of 2.5 × 1014 cm-2. The main goal is to achieve the optical doping of Alx Ga1- x N with the rare earth Pr. Structural properties, damage accumulation and Pr lattice site location were studied combining Rutherford backscattering/channeling spectrometry and high resolution X-ray diffraction. The channeling data clearly indicate a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Detailed angular scans reveal a fraction above 90% of Pr incorporated in near substitutional sites. A pronounced narrowing at the bottom of the Pr angular curve along the c-axis suggests the presence of a minor fraction with a higher displacement towards the center of the channel. The displacement is less pronounced with the increase of Ga content in the samples. Ionoluminescence with a 1H+ microbeam reveal an enhancement of the optical activity when the AlN content is in the intermediate range of concentrations |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/5520 |
ISSN: | 0168-583X |
Appears in Collections: | DFis - Artigos I3N-FSCOSD - Artigos |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
2012 Nuclear-Instruments-and-Methods-in-Physics-Research,-Section-B-Beam-Interactions-with-Materials-and-Atoms.pdf | article in press | 682.19 kB | Adobe PDF | |
2012 NIMB AIN content influence on the properties of AlxGa1xN doped with Pr ions.pdf | versão final | 867.58 kB | Adobe PDF |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.