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http://hdl.handle.net/10773/5520
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fialho, M. | pt |
dc.contributor.author | Magalhães, Sérgio | pt |
dc.contributor.author | Alves, L.C. | pt |
dc.contributor.author | Marques, C. | pt |
dc.contributor.author | Maalej, R. | pt |
dc.contributor.author | Monteiro, Teresa | pt |
dc.contributor.author | Lorenz, K. | pt |
dc.contributor.author | Alves, E. | pt |
dc.date.accessioned | 2012-01-27T11:35:57Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0168-583X | pt |
dc.identifier.uri | http://hdl.handle.net/10773/5520 | - |
dc.description.abstract | The purpose of this work is the study of the structural and optical properties of Alx Ga1- x N films grown on (0 0 0 1) sapphire substrates with different AlN molar fraction implanted with 150 keV of praseodymium ions with a fluence of 2.5 × 1014 cm-2. The main goal is to achieve the optical doping of Alx Ga1- x N with the rare earth Pr. Structural properties, damage accumulation and Pr lattice site location were studied combining Rutherford backscattering/channeling spectrometry and high resolution X-ray diffraction. The channeling data clearly indicate a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Detailed angular scans reveal a fraction above 90% of Pr incorporated in near substitutional sites. A pronounced narrowing at the bottom of the Pr angular curve along the c-axis suggests the presence of a minor fraction with a higher displacement towards the center of the channel. The displacement is less pronounced with the increase of Ga content in the samples. Ionoluminescence with a 1H+ microbeam reveal an enhancement of the optical activity when the AlN content is in the intermediate range of concentrations | pt |
dc.description.sponsorship | PTDC/CTM/100756/2008 | pt |
dc.language.iso | eng | pt |
dc.publisher | Elsevier | pt |
dc.relation | http://dx.doi.org/10.1016/j.nimb.2011.07.062 | pt |
dc.relation.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-80051898270&partnerID=40&md5=41ecd6b5c9aaf5e159a394dac3005247 | - |
dc.rights | restrictedAccess | por |
dc.subject | AlGaN | pt |
dc.subject | Ionoluminescence | pt |
dc.subject | Rare earth implantation | pt |
dc.subject | Rutherford backscattering/channeling | pt |
dc.subject | X-ray diffraction | pt |
dc.title | AIN content influence on the properties of Al x Ga1- x N doped with Pr ions | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.firstPage | 149 | - |
degois.publication.lastPage | 152 | - |
degois.publication.title | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | pt |
degois.publication.volume | 273 | - |
dc.date.embargo | 10000-01-01 | - |
Appears in Collections: | DFis - Artigos I3N-FSCOSD - Artigos |
Files in This Item:
File | Description | Size | Format | |
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2012 Nuclear-Instruments-and-Methods-in-Physics-Research,-Section-B-Beam-Interactions-with-Materials-and-Atoms.pdf | article in press | 682.19 kB | Adobe PDF | |
2012 NIMB AIN content influence on the properties of AlxGa1xN doped with Pr ions.pdf | versão final | 867.58 kB | Adobe PDF |
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