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http://hdl.handle.net/10773/6069
Title: | Rapid thermal annealing of rare earth implanted ZnO epitaxial layers |
Author: | Miranda, S.M.C. Peres, M. Monteiro, T. Alves, E. Sun, H.D. Geruschke, T. Vianden, R. Lorenz, K. |
Keywords: | Europium Ion implantation Praseodymium Rare-earth RBS Zinc oxide |
Issue Date: | 2011 |
Publisher: | Elsevier |
Abstract: | Zinc oxide epilayers grown by metal organic vapour phase epitaxy on (0 0 0 1) sapphire substrates were doped with Praseodymium and Europium by ion implantation. The as-implanted samples were either annealed in air for 20 min in a tube furnace or rapid thermal annealing (RTA) was performed, for 2 min, in a nitrogen atmosphere. The samples were characterized by Rutherford Backscattering Spectrometry/Channelling and photoluminescence. The presented results indicate that in the as-implanted samples the majority of the rare earth (RE) ions are incorporated into substitutional Zn-sites. Furnace annealing at 1000 °C recovers the crystal quality of the samples but leads to an out-diffusion of the RE. RTA suppresses diffusion but lattice damage is not fully recovered at 1000 °C. More importantly, during RTA the RE ions are driven from the substitutional site and are now found mainly on random interstitial sites and no optical activation could be achieved |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6069 |
DOI: | 10.1016/j.optmat.2010.10.009 |
ISSN: | 0925-3467 |
Appears in Collections: | DFis - Artigos I3N-FSCOSD - Artigos |
Files in This Item:
File | Description | Size | Format | |
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2011 Optical-Materials 1139.pdf | versão pdf do editor | 655.43 kB | Adobe PDF |
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