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Issue DateTitleAuthor(s)TypeAccess Type
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
2011Radiation damage formation and annealing in GaN and ZnOLorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E.conferenceObjectrestrictedAccess
1999Time resolved photoluminescence of cubic Mg doped GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Schoettker, B.; Frey, T.; As, D.J.; Schikora, D.; Lischka, K.conferenceObjectopenAccess
1999Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layersSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.conferenceObjectopenAccess
2012ZnO nanostructures grown on vertically aligned carbon nanotubes by laser-assisted flow depositionRodrigues, J.; Mata, D.; Fernandes, A. J. S.; Neto, M. A.; Silva, R. F.; Monteiro, T.; Costa, F. M.articlerestrictedAccess
1999Electrical and photoelectronic properties of hexagonal GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, L.; Pereira, E.; Schön, Q.; Heuken, M.articlerestrictedAccess
1998Distribution of 1.68 eV emission from diamond filmsCorreia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C.articleopenAccess
1991Complex formation in Mn-doped GaP samplesMonteiro, T.; Pereira, E.articlerestrictedAccess
1992Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eVMonteiro, T.; Pereira, E.articlerestrictedAccess
2006Stability and luminescence studies of Tm and Er implanted ZnO single crystalsRita, E.; Alves, E.; Wahl, U.; Correia, J.G.; Monteiro, T.; Soares, M.J.; Neves, A.; Peres, M.articlerestrictedAccess
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