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http://hdl.handle.net/10773/6718
Título: | Optical doping of ZnO with Tm by ion implantation |
Autor: | Rita, E. Alves, E. Wahl, U. Correia, J.G. Neves, A.J. Soares, M.J. Monteiro, T. |
Palavras-chave: | PL RBS/Channeling Tm doping ZnO Annealing Crystal defects Crystal lattices Ion implantation Photoluminescence Rutherford backscattering spectroscopy Semiconducting gallium Semiconductor doping Single crystals Thulium Band gap excitation Optical activation Zinc oxide |
Data: | 2003 |
Editora: | Elsevier |
Resumo: | ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence of 5 × 1015cm -2. Each sample was then subjected to one single 30min air annealing at 800°C, 950°C and 1050°C. The Tm lattice site location and defect recovery were investigated with Rutherford Backscattering/Channeling Spectroscopy. Detailed angular scans along the [0 0 0 1] direction show that 94% of the Tm ions occupy substitutional Zn sites (SZn) in the as-implanted sample. All the annealing temperatures lead to a reduction of this fraction to 30%. Also, progressive damage recovery and Tm segregation to the surface were observed, being enhanced at 1050°C. Photoluminescence (PL) studies with above band gap excitation performed on these samples revealed no luminescence on the as-implanted state. The 800°C air annealing promotes the Tm3+ optical activation and a well-defined near-infrared intraionic emission is observed. For higher annealing temperatures, in spite of no change of the Tm fraction at SZn sites, a decrease of the Tm intraionic emission was observed. These results suggest that optical activation of Tm ions is related with the defect density in their environment. © 2003 Elsevier B.V. All rights reserved. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6718 |
DOI: | 10.1016/j.physb.2003.09.017 |
ISSN: | 0921-4526 |
Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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2003_Physica-B-Condensed-Matter.pdf | versão pdf do editor | 217.22 kB | Adobe PDF |
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