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http://hdl.handle.net/10773/6248
Título: | Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire |
Autor: | Alves, E. Silva, M.F. Soares, J.C. Monteiro, T. Soares, J. Santos, L. |
Palavras-chave: | Defect anisotrophy Optical doping Photoluminescence |
Data: | 2000 |
Editora: | Elsevier |
Resumo: | Defect production and optical activity of Er-implanted α-Al2O3 were studied as a function of implanted dose and crystal orientation. Erbium fluences in the range of 8×1013–4×1015 Er+/cm2 were implanted into single crystalline samples with either the m-axis or c-axis normal to the surface. The energy of the Er ions was 200 keV. We found that the number of displaced O atoms was about two times higher on samples with the c-axis normal to the surface compared to the m-samples. The annealing stages of the damage follow a similar behaviour for the m-axis and c-axis samples and the complete recovery occurs for temperatures above 1200°C. The reconstruction of the lattice is accompanied by a reduction in the intensity of the photoluminescence signal above 825°C. Since the amount of Er and its lattice site is maintained, it is concluded that the change on its surroundings was responsible for the decrease of optical activity. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6248 |
DOI: | 10.1016/S0168-583X(99)00652-7 |
ISSN: | 0168-583X |
Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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NIMB.pdf | versão pdf do editor | 173.93 kB | Adobe PDF |
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