Utilize este identificador para referenciar este registo:
http://hdl.handle.net/10773/6148
Título: | Near-band-edge slow luminescence in nominally undoped bulk ZnO |
Autor: | Monteiro, T. Neves, A.J. Carmo, M.C. Soares, M.J. Peres, M. Wang, J. Alves, E. Rita, E. Wahl, U. |
Palavras-chave: | Zinc compounds II-VI semiconductors Wide band gap semiconductors Photoluminescence Time resolved spectra Excitons Impurity states |
Data: | Jul-2005 |
Editora: | AIP |
Resumo: | We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238 eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67 meV and deep acceptor levels at 250 and 232 meV. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6148 |
ISSN: | 0021-8979 |
Versão do Editor: | link.aip.org/link/doi/10.1063/1.1946200 |
Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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JAPL.pdf | versão pdf do editor | 133.88 kB | Adobe PDF | Ver/Abrir |
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