Utilize este identificador para referenciar este registo:
http://hdl.handle.net/10773/6142
Título: | The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices |
Autor: | Prabakaran, R. Peres, M. Monteiro, T. Fortunato, E. Martins, R. Ferreira, I. |
Palavras-chave: | Raman scattering Nanocrystals Luminescence |
Data: | Mai-2008 |
Editora: | Elsevier |
Resumo: | In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ∼1.8, ∼2.78 and ∼3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6142 |
DOI: | 10.1016/j.jnoncrysol.2007.09.105 |
ISSN: | 0022-3093 |
Aparece nas coleções: | DFis - Artigos I3N-FSCOSD - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
JNCS.pdf | versão pdf do editor | 542.06 kB | Adobe PDF |
Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.