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I3N-FSCOSD - Institute for Nanostructures, Nanomodelling and Nanofabrication - Physics of Semicondutors, Optoelectronics and Disordered Systems
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2011
Structural and optical properties of Er implanted AlN thin films: green and infrared photoluminescence at room temperature
Soares, M.J.
;
Leitão, J.P.
;
Silva, M.I.N. da
;
González, J.C.
;
Matinaga, F.M.
;
Lorenz, K.
;
Alves, E.
;
Peres, M.
;
Monteiro, T.
article
2010
Defect studies and optical activation of Yb doped GaN
Lorenz, K.
;
Alves, E.
;
Magalhes, S.
;
Peres, M.
;
Monteiro, T.
;
Kozanecki, A.
;
Valerio, M.E.G.
article
2010
Damage recovery and optical activity in europium implanted wide gap oxides
Alves, E.
;
Marques, C.
;
Franco, N.
;
Alves, L.C.
;
Peres, M.
;
Soares, M.J.
;
Monteiro, T.
article
2011
Rapid thermal annealing of rare earth implanted ZnO epitaxial layers
Miranda, S.M.C.
;
Peres, M.
;
Monteiro, T.
;
Alves, E.
;
Sun, H.D.
;
Geruschke, T.
;
Vianden, R.
;
Lorenz, K.
article
2012
AIN content influence on the properties of Al x Ga1- x N doped with Pr ions
Fialho, M.
;
Magalhães, Sérgio
;
Alves, L.C.
;
Marques, C.
;
Maalej, R.
;
Monteiro, Teresa
;
Lorenz, K.
;
Alves, E.
article
25-Jun-2008
Microwave dielectric permittivity and photoluminescence of Eu 2O3 doped laser heated pedestal growth Ta 2O5 fibers
Rubinger, C.P.L.
;
Costa, L.C.
;
Macatrão, M.
;
Peres, M.
;
Monteiro, T.
;
Costa, F.M.
;
Franco, N.
;
Alves, E.
;
Saggioro, B.Z.
;
Andreeta, M.R.B.
;
Hernandes, A.C.
article
7-May-2010
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
Peres, M.
;
Neves, A.J.
;
Monteiro, T.
;
Magalhães, S.
;
Alves, E.
;
Lorenz, K.
;
Okuno-Vila, H.
;
Fellmann, V.
;
Bougerol, C.
;
Daudin, B.
article
Jan-2007
Optical studies of ZnO nanocrystals doped with Eu3+ ions
Peres, M.
;
Cruz, A.
;
Pereira, S.
;
Correia, M. R.
;
Soares, M. J.
;
Neves, A.
;
Carmo, M. C.
;
Monteiro, T.
;
Pereira, A. S.
;
Martins, M. A.
;
Trindade, T.
;
Alves, E.
;
Nobre, S. S.
;
Ferreira, R.A. Sá
article
23-Mar-2012
Rare earth co-doping nitride layers for visible light
Rodrigues, J.
;
Miranda, S. M. C.
;
Santos, N. F.
;
Neves, A. J.
;
Alves, E.
;
Lorenz, K.
;
Monteiro, T.
article
15-Dec-2018
Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
Fialho, M.
;
Magalhães, S.
;
Rodrigues, J.
;
Chauvat, M.P.
;
Ruterana, P.
;
Monteiro, T.
;
Lorenz, K.
;
Alves, E.
article
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Ion implantation
5
Photoluminescence
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X-ray diffraction
3
III-V semiconductors
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Optical properties
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RBS
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Wide band gap semiconductors
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AlGaN
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Date issued
16
2010 - 2020
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2007 - 2009