Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions

Utilize este identificador para referenciar este registo: http://hdl.handle.net/10773/5630

Título:	Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Autor:	Monteiro, T. Neves, A. J. Soares, M. J. Carmo, M. C. Peres, M. Alves, E. Rita, E.
Palavras-chave:	Zinc compounds Thulium II-VI semiconductors iion implantation Optical frequency conversion Ultraviolet spectra Visible spectra Photoluminescence Energy gap
Data:	Nov-2005
Editora:	American Institute of Physics
Resumo:	We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process.
Peer review:	yes
URI:	http://hdl.handle.net/10773/5630
ISSN:	0003-6951
Versão do Editor:	http://link.aip.org/link/doi/10.1063/1.2128491
Aparece nas coleções:	DFis - Artigos

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