Utilize este identificador para referenciar este registo: http://hdl.handle.net/10773/19439
Título: Towards a high thermoelectric performance in rare-earth substituted SrTiO3: effects provided by strongly-reducing sintering conditions
Autor: Kovalevsky, A. V.
Yaremchenko, A. A.
Populoh, S.
Thiel, P.
Fagg, D. P.
Weidenkaff, A.
Frade, J. R.
Palavras-chave: ELECTRONIC TRANSPORT-PROPERTIES
DOPED STRONTIUM-TITANATE
DEFECT CHEMISTRY
CERAMICS
CONDUCTIVITY
POLYCRYSTALS
SYSTEM
OXIDES
LA
Data: 2014
Editora: ROYAL SOC CHEMISTRY
Resumo: Donor-substituted strontium titanate ceramics demonstrate one of the most promising performances among n-type oxide thermoelectrics. Here we report a marked improvement of the thermoelectric properties in rare-earth substituted titanates Sr0.9R0.1TiO3 +/-delta (R = La, Ce, Pr, Nd, Sm, Gd, Dy, Y) to achieve maximal ZT values of as high as 0.42 at 1190 K < T < 1225 K, prepared via a conventional solid state route followed by sintering under strongly reducing conditions (10%H-2-90%N-2, 1773 K). As a result of complex defect chemistry, both electrical and thermal properties were found to be dependent on the nature of the rare-earth cation and exhibit an apparent correlation with the unit cell size. High power factors of 1350-1550 mu W m(-1) K-2 at 400-550 K were observed for R = Nd, Sm, Pr and Y, being among the largest reported so far for n-type conducting bulk-ceramic SrTiO3-based materials. Attractive ZT values at high temperatures arise primarily from low thermal conductivity, which, in turn, stem from effective phonon scattering in oxygen-deficient perovskite layers formed upon reduction. The results suggest that highly-reducing conditions are essential and should be employed, whenever possible, in other related micro/nanostructural engineering approaches to suppress the thermal conductivity in target titanate-based ceramics.
Peer review: yes
URI: http://hdl.handle.net/10773/19439
DOI: 10.1039/c4cp04127e
ISSN: 1463-9076
Versão do Editor: 10.1039/c4cp04127e
Aparece nas coleções: CICECO - Artigos



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