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2000
Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire
Alves, E.
;
Silva, M.F.
;
Soares, J.C.
;
Monteiro, T.
;
Soares, J.
;
Santos, L.
article
2000
Steady-state and time-resolved luminescence in InGaN layers
Seitz, R.
;
Gaspar, C.
;
Correia, M.
;
Monteiro, T.
;
Pereira, E.
;
Heuken, M.
;
Schoen, O.
article
2000
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Vacas, J.
;
Lahrèche, H.
;
Monteiro, T.
;
Caspar, C.
;
Pereira, E.
;
Brylinski, C.
;
Di Forte-Poisson, M.A.
article
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Pereira, E.
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Brylinski, C.
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Correia, M.
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Gaspar, C.
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Heuken, M.
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Subject
2
Photoluminescence
1
deep level
1
Defect anisotrophy
1
electroluminescence
1
Homojunction and heterojunction d...
1
InGaN ternary alloys
1
Optical doping
1
Time-resolved spectroscopy