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Issue Date
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1-Jul-2013
The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions
Soares, M. R. N.
;
Soares, M. J.
;
Alves, L. C.
;
Alves, E.
;
Lorenz, K.
;
Costa, F. M.
;
Monteiro, T.
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
Nov-2005
Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Monteiro, T.
;
Neves, A. J.
;
Soares, M. J.
;
Carmo, M. C.
;
Peres, M.
;
Alves, E.
;
Rita, E.
article
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Lorenz, K.
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Alves, L. C.
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Boemare, C.
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Carlos, L. D.
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Carmo, M. C.
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Costa, F. M.
1
Ferreira, R. A. Sá
1
Neves, A. J.
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Peres, M.
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Subject
1
Energy gap
1
Gallium nitride
1
GaN
1
II-VI semiconductors
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iion implantation
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Implantation
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Ion implantation
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Ionoluminescence
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Lattice locations
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Date issued
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2010 - 2013
2
2001 - 2009