Browsing by Author Seitz, R.
Showing results 1 to 8 of 8
Issue Date | Title | Author(s) | Type | Access Type |
1999 | Electrical and photoelectronic properties of hexagonal GaN | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, L.; Pereira, E.; Schön, Q.; Heuken, M. | article | |
1999 | Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B. | conferenceObject | |
2000 | Steady-state and time-resolved luminescence in InGaN layers | Seitz, R.; Gaspar, C.; Correia, M.; Monteiro, T.; Pereira, E.; Heuken, M.; Schoen, O. | article | |
1999 | Strain distribution in GaN hexagons measured by Raman spectroscopy | Seitz, R.; Monteiro, Teresa; Pereira, Maria Estela; Di Forte-Poisson, M. | article | |
1999 | Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy | Seitz, R.; Monteiro, T.; Pereira, E.; Di Forte-Poisson, M. | article | |
1997 | Temperature behaviour of the yellow emission in GaN | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P. | article | |
1999 | Time resolved photoluminescence of cubic Mg doped GaN | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Schoettker, B.; Frey, T.; As, D.J.; Schikora, D.; Lischka, K. | conferenceObject | |
1998 | Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P. | article | |