Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/9799
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dc.contributor.authorLourenço, Nunopt
dc.contributor.authorAlves, Luis Neropt
dc.contributor.authorCura, José Luispt
dc.date.accessioned2013-02-25T11:05:40Z-
dc.date.issued2012-12-
dc.identifier.isbn978-1-4673-1261-5-
dc.identifier.urihttp://hdl.handle.net/10773/9799-
dc.description.abstractThis paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging from -20ºC to 80ºC. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm2. Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2mV variation for the entire supply voltage span.pt
dc.language.isoengpt
dc.publisherIEEEpt
dc.rightsrestrictedAccesspor
dc.subjectBandgap voltage referencespt
dc.subjectCMOS technologypt
dc.subjectTemperature compensationpt
dc.subjectPTATpt
dc.titleA multi-valued 350nm CMOS voltage referencept
dc.typeconferenceObjectpt
dc.peerreviewedyespt
ua.publicationstatuspublishedpt
ua.event.date9-12 dezembro, 2012pt
ua.event.typeconferencept
degois.publication.firstPage629pt
degois.publication.lastPage632pt
degois.publication.locationSeville, Spainpt
degois.publication.title19th IEEE International Conference on Electronics, Circuits and Systemspt
dc.date.embargo10000-01-01-
dc.identifier.doi10.1109/ICECS.2012.6463668pt
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