Rare earth co-doping nitride layers for visible light

Abstract

AlN and GaN films were co-implanted with europium and praseodymium ions followed by thermal annealing treatments for the lattice recovery and ions activation. Their structural and optical properties were studied by Rutherford Backscattering Spectrometry and optical spectroscopy techniques. The evolution of the ions photoluminescence intensity with temperature was analyzed for both AlN:Eu,Pr and GaN:Eu,Pr hosts, and compared with the ones of individually doped layers (GaN:Eu, GaN:Pr, AlN:Eu and AlN:Pr). Sharp emission lines due to intra-4fn shell transitions can be observed even at room temperature for the Eu3þ and Pr3þ for both hosts.