Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6730
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dc.contributor.authorMonteiro, T.pt
dc.contributor.authorSoares, M.J.pt
dc.contributor.authorNeves, A.J.pt
dc.contributor.authorCarmo, M.C.pt
dc.contributor.authorPeres, M.pt
dc.contributor.authorCruz, A.pt
dc.contributor.authorAlves, E.pt
dc.contributor.authorWahl, U.pt
dc.contributor.authorRita, E.pt
dc.contributor.authorMunoz-SanJose, V.pt
dc.contributor.authorZuniga-Perez, J.pt
dc.date.accessioned2012-02-22T10:18:41Z-
dc.date.issued2006-
dc.identifier.issn1610-1634-
dc.identifier.urihttp://hdl.handle.net/10773/6730-
dc.description.abstractZnO substrates and films were intentionally implanted with rare earth and transition metal ions. The influence of the implantation and subsequent air thermal annealing treatments on the structural and optical properties of ZnO samples were studied by using Rutherford backscattering spectrometry and low temperature photoluminescence techniques. Intraionic Tm-related emission was observed for bulk and ZnO films. Similarly, Eu and Tb-doped ZnO films follow the same trend observed in bulk samples. No intraionic related emission was observed for Eu-doped samples even being the ion in Zn sites and for the Tb-doped samples ion segregation was observed for thermal annealing temperatures above 800°C. For the Mn-doped ZnO bulk samples the lattice recovery follows the same trend to that one observed for the Fe-doped samples, starting near 800°C being fully recovered at 1050°C. Although Fe3+ was observed no intraionic Mn-related emission was detected under the used conditions.pt
dc.description.sponsorshipFCT/FEDER (POCTI/CTM/45236/02)pt
dc.language.isoengpt
dc.publisherWILEY-VCH Verlag GmbHpt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-33646191201&partnerID=40&md5=4d93ee99d0e80538b0116545a54529e2
dc.rightsrestrictedAccesspor
dc.subjectIon implantationpt
dc.subjectOptical propertiespt
dc.subjectPhotoluminescencept
dc.subjectRapid thermal annealingpt
dc.subjectRutherford backscattering spectroscopypt
dc.subjectTemperature distributionpt
dc.subjectTransition metalspt
dc.titleLuminescence and structural properties of defects in ion implanted ZnOpt
dc.typeconferenceObjectpt
dc.peerreviewedyespt
ua.publicationstatuspublishedpt
ua.event.title12th International Conference on II-VI Compoundspt
ua.event.date12-16 September, 2005pt
ua.event.typeconferencept
degois.publication.firstPage968pt
degois.publication.issue4pt
degois.publication.issue4
degois.publication.lastPage971pt
degois.publication.titlePhysica Status Solidi C: Conferences
degois.publication.volume3pt
dc.date.embargo10000-01-01-
dc.identifier.doi10.1002/pssc.200564640*
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