Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6485
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dc.contributor.authorCorreia, M.R.pt
dc.contributor.authorMonteiro, T.pt
dc.contributor.authorPereira, E.pt
dc.contributor.authorCosta, L.C.pt
dc.date.accessioned2012-02-16T11:15:30Z-
dc.date.available2012-02-16T11:15:30Z-
dc.date.issued1998-
dc.identifier.issn0021-8979pt
dc.identifier.urihttp://hdl.handle.net/10773/6485-
dc.description.abstractFree-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman linespt
dc.language.isoengpt
dc.publisherAIPpt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-0001296331&partnerID=40&md5=ab4728aa099383907f2afb6a85808d4b
dc.rightsopenAccesspor
dc.subjectDiamondpt
dc.subjectElemental semiconductorspt
dc.subjectSemiconductor thin filmspt
dc.subjectCVD coatingspt
dc.subjectPhotoluminescencept
dc.subjectRaman spectrapt
dc.subjectSpectral line intensitypt
dc.subjectSpectral line breadthpt
dc.titleDistribution of 1.68 eV emission from diamond filmspt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage2207pt
degois.publication.issue4
degois.publication.lastPage2211pt
degois.publication.titleJournal of Applied Physicspt
degois.publication.volume84pt
dc.identifier.doi10.1063/1.368284*
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