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http://hdl.handle.net/10773/6107
Title: | Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN |
Author: | Rogers, D.J. Hosseini Teherani, F. Ougazzaden, A. Gautier, S. Divay, L. Lusson, A. Durand, O. Wyczisk, F. Garry, G. Monteiro, T. Correira, M.R. Peres, M. Neves, A. McGrouther, D. Chapman, J.N. Razeghi, M. |
Keywords: | Aluminium compounds Gallium compounds III-V semiconductors Nitrogen Semiconductor thin films Sputter etching Vapour phase epitaxial growth Wide band gap semiconductors Zinc compounds |
Issue Date: | Aug-2007 |
Publisher: | AIP |
Abstract: | Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice. © 2007 American Institute of Physics |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6107 |
ISSN: | 0003-6951 |
Publisher Version: | link.aip.org/link/doi/10.1063/1.2770655 |
Appears in Collections: | DFis - Artigos I3N-FSCOSD - Artigos |
Files in This Item:
File | Description | Size | Format | |
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APL.pdf | versão pdf do editor | 212.73 kB | Adobe PDF | View/Open |
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