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http://hdl.handle.net/10773/5950| Title: | The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3 |
| Author: | Monteiro, Olinda C. Trindade, Tito Park, Jin H. O'Brien, Paul |
| Keywords: | Bismuth sulfide Carbamates Dithio MOCVD Low pressure Single-source precursors |
| Issue Date: | Oct-2000 |
| Publisher: | Wiley-VCH Verlag Berlin |
| Abstract: | Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/5950 |
| ISSN: | 0948-1907 |
| Appears in Collections: | DQ - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Chem. Vap. Deposition 2000, 6, 230-232.pdf | 319.33 kB | Adobe PDF |  |
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