Please use this identifier to cite or link to this item:
Title: The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3
Author: Monteiro, Olinda C.
Trindade, Tito
Park, Jin H.
O'Brien, Paul
Keywords: Bismuth sulfide
Low pressure
Single-source precursors
Issue Date: Oct-2000
Publisher: Wiley-VCH Verlag Berlin
Abstract: Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.
Peer review: yes
ISSN: 0948-1907
Appears in Collections:DQ - Artigos

Files in This Item:
File Description SizeFormat 
Chem. Vap. Deposition 2000, 6, 230-232.pdf319.33 kBAdobe PDFrestrictedAccess

Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.